This post explains for the MOSFET K3567.
The Part Number is 2SK3567.
The function of this semiconductor is 600V, 3.5A, N-Channel MOSFET
The package is TO-220 Type
Manufacturer: Toshiba Semiconductor
K3567 is Silicon N Channel MOS Type Field Effect Transistor. A 600V silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) refers to a specific type of MOSFET that operates as an N-channel transistor and has a maximum voltage rating of 600 volts (V).
1. N-Channel: The MOSFET operates as an N-channel transistor, meaning it has an N-type channel between the drain and source terminals. In an N-channel MOSFET, a positive voltage applied to the gate terminal controls the flow of current between the drain and source.
2. Voltage Rating: The MOSFET has a maximum voltage rating of 600V, indicating it can handle a maximum voltage of 600V without the risk of damage. This voltage rating is significant for applications that require high-voltage operation, such as power supplies, motor control, inverters, and other high-power systems.
• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) […]
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 3.5 A
4. Drain power dissipation : PD = 35 W
5. Single pulse avalanche energy : Eas = 201 mJ
6. Avalanche curren : Iar = 3.5 A
7. Repetitive avalanche energy : Ear = 3.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
1. Switching Regulator