This post explains for the MOSFET K3567.
The Part Number is 2SK3567.
The function of this semiconductor is 600V, N-Channel MOSFET
Manufacturer: Toshiba Semiconductor
Images:
Description
2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Features
• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) […]
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 3.5 A
4. Drain power dissipation : PD = 35 W
5. Single pulse avalanche energy : Eas = 201 mJ
6. Avalanche curren : Iar = 3.5 A
7. Repetitive avalanche energy : Ear = 3.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C
Applications:
Switching Regulator
