SVF7N65F PDF – 650V, 7A, N-Ch, MOSFET ( Transistor )

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: SVF7N65F, SVF7N65T

Function: 650V, 7A, N-CHANNEL MOSFET Transistor

Package: TO-220F, TO-220 Type

Manufacturer: Silan Microelectronics

Images:

SVF7N65F mosfet datasheet

Description

SVF7N65T / SVF7N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

N-channel enhancement mode power MOSFETs are popular in power electronics due to their low on-resistance (RDS(on)) and fast switching capabilities. These transistors are used to efficiently control and switch high currents and voltages in various applications.

SVF7N65F pdf datasheet

Features:

1. 7A, 650V, RDS(on)(typ)=1.1 Ω @VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

Pinout:

SVF7N65F transistor pinout

Absolute Maximum Ratings (Tc = 25°C)

1. Drain-Source Voltage : VDS = 650 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : Id = 7 A
4. Power Dissipation : 46 W
5. Channel temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C

SVF7N65F PDF Datasheet

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J449 PDF Datasheet – P-Ch, MOSFET – 2SJ449

Part Number: J449, 2SJ449

Function: P-Channel Power MOSFET

Package: TO-220 Type

Manufacturer: NEC

Images:J449 pdf pinout

Description

The J449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Features

• Low On-Resistance :

RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A) 15.0 ±0.3 12.0 ±0.2 13.5 MIN.

• Low Ciss Ciss = 1040 pF TYP.

• High Avalanche Capability Ratings

• Isolated TO-220 Package

J449 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Total Power Dissipation : Pt = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

J449 PDF Datasheet