MOSFET

MDS3604 PDF Datasheet – 30V, 11A, Single P-Ch, MOSFET

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Part Number: MDS3604, MDS3604URH

Function: -30V, -11A, Single P-Channel Trench MOSFET

Package: SOIC-8 Type

Manufacturer: MagnaChip

Images:MDS3604 pinout datasheet

Description

The MDS3604 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

 

Features

1. VDS = -30V

2. ID = -11A @VGS = -10V

3. RDS(ON)

(1) < 10.0mΩ @VGS = -20V
(2) < 12.1mΩ @VGS = -10V
(3) < 18.3mΩ @VGS = -5V

 

MDS3604 pdf mosfet

 

Applications:

1. Load Switch

2. General purpose applications

3. Smart Module for Note PC Battery

MDS3604 PDF Datasheet

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MDF4N60 PDF Datasheet – 600V, N-Channel MOSFET

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Part Number: MDF4N60

Function: 600V, 4.6A, N-Channel MOSFET

Package: TO-220, TO-220F Type

Manufacturer: MagnaChip

Images:MDF4N60 pinout datasheet

Description

MDF4N60 is N-channel MOSFET 600V, 4.6A, 2.0Ω. These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. VDS = 600V

2. ID = 4.6A

3. RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V

Applications:

1. Power Supply

2. PFC

3.  High Current, High Speed Switching

MDF4N60 pdf mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V

2. Gate to source Voltage: VGSS = ± 30 V

3. Drain current: ID = 4.6 A

4. Drain Power Dissipation: Pd = 34.7 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

MDF4N60 PDF Datasheet