K2161 Datasheet PDF – 200V, 9A, MOSFET, Transistor

Part Number: K2161

Function: 200V, 9A, N-Ch, MOSFET

Package: TO-220ML Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

K2161 datasheet

 

Description

This is 200V, 9A, N-Channel Silicon MOSFET.

Features

1. Low ON resistance.

2. Ultrahigh-speed switching.

3. Low-voltage drive.

4. Micaless package facilitating mounting.

Test circuits :

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Allowable Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Ultrahigh-Speed Switching

 

Other data sheets are available within the file: 2SK2161

K2161 Datasheet PDF Download


K2161 pdf

2SK3061 PDF Datasheet – 60V, 70A, MOSFET, Transistor – Renesas

Part Number: 2SK3061

Function: 60V, 70A, N-CHANNEL POWER MOSFET

Package: Isolated TO-220 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK3061 datasheet

 

Description

The 2SK3061 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Renesas Electronics. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SK3061 has a maximum drain-source voltage of 600V and a maximum drain current of 20A,
making it suitable for high voltage, high current applications.

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features

1. Low on-state resistance :

(1) RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)

(2) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)

2. Low Ciss: Ciss= 5200 pF TYP.

3. Built-in gate protection diode

4. Isolated TO-220 package

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 70 A

4. Total Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2SK3061 Datasheet PDF Download


2SK3061 pdf

Other data sheets are available within the file: K3061