This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3561, 2SK3561

Function: N-Channel MOSFET ( Vdss, Vdgr = 500V, Pd = 40W )

Package: TO 220 Type

Manufacturer: Toshiba

Image:

Description

This is 500V, 8A, Silicon N-Channel MOS Type Field Effect Transistor.

Features for K3561 :

1. Low drain-source ON resistance: RDS (ON)= 0.75 Ω(typ.)

2. High forward transfer admittance: | Yfs | = 6.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinouts:

 

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain-source voltage: VDSS = 500 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain current (DC): Id = 8A

5. Drain power dissipation (Tc = 25°C): PD = 40 W

6. Single pulse avalanche energy : EAS = 312 mJ

7. Avalanche current : Iar = 8 A

 

Applications:

1. Switching Regulator

 

K3561 Datasheet

 

Related articles across the web

• Electronic Design’s Products of the Week (12/13-12/19)
• TI SimpleLink CC1310 Wireless MCU Promises 20 Km Range, 20-Year Battery Life on a Coin Cell