MOSFET

FDPF16N50UT Datasheet PDF – 500V, 15A, N-Ch, MOSFET

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Part Number: FDPF16N50UT

Function: N-Channel FRFET MOSFET / 500 V, 15 A, 480 mOhm

Package: TO-220F Package

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FDPF16N50UT datasheet

 

Description

UniFET MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETMOSFET has much superior body diode reverse recovery performance.

Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode.

This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features

1. R DS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A

2. Low Gate Charge (Typ. 32 nC)

3. Low Crss (Typ. 20 pF)

4. 100% Avalanche Tested

5. Improved dv/dt Capability

 

Applications:

1. LCD/LED/PDP TV

2. Lighting

3. Uninterruptible Power Supply

Other data sheets are available within the file: 16N50UT, FDPF16N50

 

FDPF16N50UT Datasheet PDF Download


FDPF16N50UT pdf

2SK1925 Datasheet PDF – 600V, 8A, N-Ch, MOSFET- Sanyo

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Part Number: 2SK1925

Function: 600V, 8A, N-Channel MOSFET, Transistor

Package: TO-3PB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SK1925 datasheet

 

Description

The 2SK1925 is 600V, 8A, N-Channel MOSFET. In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer.

Features

1. Low ON resistance

2. Very high-speed switching

3. High-speed diode (trr = 150ns)

Absolute Maximum Ratings at Ta = 25°C

1. Drain-to-Source Voltage : VDSS = 600 V

2. Gate-to-Source Voltage : VGSS = ±30 V

3. Drain Current (DC) : ID = 8 A

4. Drain Current (pulse) : IDP = 32 A

5. Allowable Power Dissipation : PD = 2.5 W

 

Applications

1. Very High-Speed Switching

Other data sheets are available within the file: K1925

2SK1925 Datasheet PDF Download


2SK1925 pdf