K2645-01MR Datasheet PDF – 600V, 9A, N-ch, MOSFET – Fuji

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K2645-01MR, 2SK2645-01MR

Function: N-channel MOSFET ( 600V, 9A, 500W )

Package: TO-220 Type

Manufacturer: Fuji Electric

Image

K2645-01MR mosfet

Description

This is 600V, 9A, N-Channel Silicon Power MOSFET.

Features

1. High Speed Switching
2. Low On-Resistance
3. No Secondary Breakdown
4. Low Driving Power
5. High Voltage
6. VGS = ± 30V Guarantee
7. Repetitive Avalanche Rated

Absolute maximum ratings

1. Drain-source voltage : Vds = 600 V
2. Continuous drain current : Id = ± 9 A
3. Pulsed drain current : Id(puls) = ± 32 A
4. Gate-source voltage : Vgs = ± 32 A
5. Max. power dissipation : Pd = 50 W

Pinout

K2645-01MR datasheet pdf

Applications of K2645-01MR

1. Switching Regulators
2. UPS
3. DC-DC converters
4. General Purpose Power Amplifier

K2645-01MR Datasheet


 

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IRF530 Datasheet PDF – Vds=100V, 14A, Power MOSFET – Vishay

Part Number: IRF530

Function : 100V, 14A, Third generation Power MOSFET

Package: TO-220AB Type

Manufacturer: Vishay

Image

irf530-mosfet-vishay

Description

This is 100V, 14A, Power MOSFET.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Pinout

irf530-datasheet-pinout

Features

1. Dynamic dV/dt Rating

2. Repetitive Avalanche Rated

3. 175 °C Operating Temperature

4. Fast Switching

5. Ease of Paralleling

6. Simple Drive Requirements

7. Compliant to RoHS Directive 2002/95/EC

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 14 A

4. Maximum Power Dissipation: Pd = 88 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

IRF530 Datasheet PDF

IRF540N pdf


 

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