MOSFET

HY1906 Datasheet – 60V, 120A, N-Channel MOSFET

Posted on by pinout

Part Number: HY1906, HY1906P, HY1906B

Package: TO-220FB-3L

Function: N-Channel Enhancement Mode MOSFET

Manufactuers : HOOYI Semiconductor

Image:

HY1906 Image

Description

This is 60V, 120A, N-Channel MOSFET.

Features

1. 60V / 120 A , R DS(ON) = 6.0 mW  (typ. )   @   V GS = 10V
2. Avala nche  Rated
3. Reli able  and  Rugged
4. Lead  Free  and  Green  Devices  Available (RoHS  Compli ant)

Applications

1. Power Management for Inverter Systems.

HY1906 Datasheet

Absolute Maximum Ratings

1. Drain-Source Voltage : Vdss = 60 V
2. Gate-Source Voltage : Vgss = ±25 V
3. Diode Continuous Forward Current : Is = 120 A
4. Maximum Junction Temperature: Tj = 175 °C

HY1906 Datasheet


 

HY1906 pdf

Related articles across the web

K3115 Datasheet PDF- 600V, 6A, N-channel MOSFET, 2SK3115

Posted on by pinout

Part Number: K3115, 2SK3115

Function: 600V, 6A, N-channel Power MOSFET

Package: TO-220 Type

Manufacturer: NEC

Image

K3115 image

Description

The K3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Pinout

K3115 datasheet pdf

Features

1. Low gate charge : QG= 26 nC TYP. (VDD= 450 V, VGS= 10 V, ID= 6.0 A)

2. Gate voltage rating ±30 V

3. Low on-state resistance : RDS(on)= 1.2 ΩMAX. (VGS= 10 V, ID= 3.0 A)

4. Avalanche capability ratings

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS =600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Total Power Dissipation : Pt = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

K3115 Datasheet PDF


 

Related articles across the web