Part Number: CSD19536

Function: 100V, N-Channel NexFET Power MOSFET

Package: TO-220 Plastic Type

Manufacturer: Texas Instruments

Image and Pinouts:

 

Description

The 100 V, 2.3 mΩ, TO-220 NexFET power MOSFET is designed to minimize losses in power
conversion applications.

 

Features

1. Ultra-Low Qg and Q gd

2. Low Thermal Resistance

3. Avalanche Rated
(1) Pb-Free Terminal Plating
(2) RoHS Compliant

4. Halogen Free

5. TO-220 Plastic Package

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 150 A

4. Power Dissipation: Pd = 375 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. Secondary Side Synchronous Rectifier

2. Motor Control

Other data sheets are available within the file: CSD19536KCS

 

CSD19536 Datasheet PDF Download