MOSFET

K2845 Datasheet – 900V, N-ch MOSFET – Toshiba

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Part Number: K2845, 2SK2845

Function:  Silicon N-Channel MOSFET

Package: TO 251, SC-64 Pin Type

Manufacturer: Toshiba

Image:

K2845 MOSFET Toshiba

Description

This is Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON-resistance : RDS (ON) = 8.0 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 0.9 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4.Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

K2845 pinout 2SK2845

Absolute Maximum Ratings

1. Drain-source voltage: VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 40 W
5. Single-pulse avalanche energy : EAS = 324 mJ

Applications:

Chopper Regulator, DC/DC Converter and Motor Drive

K2845 Datasheet


 

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D9N40 Datasheet PDF – 400V, 8A, N-Ch MOSFET, AOD9N40

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art Number : D9N40

Function: 400V, 8A, N-Channel MOSFET

Package: DPak Type

Manufacturer: Alpha & Omega Semiconductors

Image:

D9N40

Description

The D9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), C issand Crss along  with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. – Alpha & Omega Semiconductors

D9N40-Detail

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 400 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Power Dissipation: Pd = 125 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

D9N40 Datasheet PDF


Official site : http://www.aosmd.com/, Datasheet PDF Download

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