2SK1338 Datasheet PDF – 900V, 2A, N-Ch, MOSFET – Hitachi

Part Number: 2SK1338

Function: 900V, 2A, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi,  Renesas Electronics

Image

2SK1338 mosfet transistor

 

Description

This is 900V, 2A, Silicon N-Channel MOSFET.

 

Features

1. Low on-resistance

2. High speed switching

3. Low drive current

4. No secondary breakdown

4. Suitable for switching regulator and DC-DC converter

 

Pinouts:

2SK1338 datasheet

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ±30 V

3. Drain current: ID = 2 A

4. Drain peak current : ID(pulse) = 6 A

5. Body to drain diode reverse drain current : IDR = 2 A

6. Channel dissipation: Pch = 50 W

7. Channel temperature: Tch = 150 °C

8. Storage temperature: Tstg =  -55 to +150 °C

2SK1338 Spec

Application:

1. High speed power switching

Other data sheets are available within the file:  K1338

2SK1338 Datasheet PDF

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2SK1338 pdf

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K2961 Datasheet PDF – 60V, 2A, N-ch, MOSFET, 2SK2961

Part Number: K2961, 2SK2961

Function: 60V, 2A, N-CHANNEL MOSFET

Package: TO-92MOD Type

Manufacturer: Toshiba Semiconductor

Image

K2961 mosfet toshiba

Description

This is 60V, 2A, Silicon N-Channel MOS Field Effect Transistor.

Features

1. Low drain-source ON resistance  : RDS (ON)= 0.2 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 2.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (VDS= 60 V)

4. Enhancement mode  : Vth= 0.8~2.0 V (VDS= 10 V, ID= 1 mA)

 

Absolute Maximum Ratings

1. Drain-source voltage: VDSS = 60 V

2. Drain-gate voltage (RGS= 20 kΩ): VDGR = 60  V

3. Gate to source voltage: VGSS = ± 20 V

4. Drain current: ID = 2 A

5. Drain power dissipation : PD = 0.9 W

6. Channel temperature: Tch = 150 °C

7. Storage temperature range : Tstg = -55 ~ 150 °C

 

Pinout for K2961

K2961 datasheet pdf

Applications:

1. Relay Drive

2. Motor Drive

3. DC-DC Converter

K2961 Datasheet


 

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