IRFBC40 Datasheet PDF – 600V, 6.2A, N-Ch, MOSFET

Part Number: IRFBC40

Function: 600V, 6.2A, N-Ch, Power MOSFET

Package: TO-220AB Type

Manufacturer: Vishay Semiconductors

Image and Pinouts:

IRFBC40 datasheet

 

Description

The IRFBC40 is 600V, 6.2A, N-Channel MOSFET.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features

1. Dynamic dV/dt Rating

2. Repetitive Avalanche Rated

3. Fast Switching

4. Ease of Paralleling

5. Simple Drive Requirements

6. Lead (Pb)-free Available

Other data sheets are available within the file:

IRFBC40PBF, IRFBC40SPBF, SiHFBC40, SiHFBC40-E3

 

IRFBC40 Datasheet PDF Download

IRFBC40 pdf

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FQP50N06L Datasheet – N-Ch, 60V, MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: FQP50N06L

Function: N-Channel QFET MOSFET ( 60 V, 52.4 A, 21 mΩ )

Package: TO-220 Tyoe

Manufacturer: Fairchild Semiconductor

FQP50N06L Pinout

FQP50N06L datasheet

 

Description

The FQP50N06L is 60V, 52.4A, N-Channel MOSFET.

This N-Channel enhancement mode power MOSFET is  produced using Fairchild Semiconductor’s proprietary  planar stripe and DMOS technology. This advanced  MOSFET technology has been especially tailored to reduce  on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching power applications.

 

Features

1. 52.4 A, 60 V, Rds(on)= 21 mΩ(Max.) @ Vgs= 10V Id= 26.2 A

2. Low Gate Charge (Typ. 24.5 nC)

3. Low Crss (Typ. 90 pF)

4. 100% Avalanche Tested

5. 175°C Maximum Junction Temperature Rating

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 52.4 A (Tc = 25°C)

4. Power Dissipation: Pd = 121 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: 50N06L

FQP50N06L Datasheet PDF


FQP50N06L pdf