Part Number: 1D0N60

Function: N-CHANNEL MOSFET / Vdss= 600V, Id = 1.0A

Package: DPAK, IPAK Type

Manufacturer: KEC Holdings

Image and Pinouts:

 

Description

This is N-CHANNEL MOS FIELD EFFECT TRANSISTOR.

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

Features

1. VDSS= 600V, ID= 1.0A

2. Drain-Source ON Resistance : RDS(ON)=12 @VGS = 10V

3. Qg(typ.) = 5.9nC

 

 

 

Other data sheets are available within the file: KHB1D0N60D, KHB1D0N60I

1D0N60 Datasheet PDF Download

Part Number: IRF3708

Function: HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A

Package: TO-220 Type

Manufacturer: International Rectifier

Image and Pinouts:

 

Description

This is 30V, 62A, HEXFET Power MOSFET.

Benefits :

1. Ultra-Low Gate Impedance

2. Very Low RDS(on)at 4.5V VGS

3. Fully Characterized Avalanche Voltage and Current

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 12 V

3. Drain current: ID = 62 A

4. Drain Power Dissipation: Pd = 87 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Frequency DC-DC Isolated Converters with Synchronous Rectification for Teleco and Industrial Use

2. High Frequency Buck Converters for Computer Processor Power

Other data sheets are available within the file:

IRF3708L, IRF3708S

 

IRF3708 Datasheet PDF Download