Part Number: J377, 2SJ377

Function: -60V, -5A, P-CHANNEL MOSFET

Package: TO-252 Type

Manufacturer: Toshiba Semiconductor

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Description

The J377 is a P-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba.

It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SJ377 has a maximum drain-source voltage of -60V and a maximum drain current of -5A,
making it suitable for high voltage, high current applications.

Features

1. 4 V gate drive

2.  Low drain-source ON-resistance  : RDS (ON)= 0.16 Ω(typ.)

3. High forward transfer admittance  : | Yfs | = 4.0 S (typ.)

4. Low leakage current  : IDSS= −100 μA (max) (VDS= −60 V)

5. Enhancement mode  : Vth = −0.8 to −2.0 V (VDS= −10 V, ID= −1 mA)

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = – 60 V

2. Drain-gate voltage (RGS= 20 kΩ): VDGR = – 60  V

3. Drain power dissipation (Tc = 25°C) : PD = 20 W

4. Single-pulse avalanche energy : EAS = 273 mJ

5. Avalanche current : IAR = – 5 A

6. Repetitive avalanche energy : EAR = 2 mJ

Applications:

1. Relay Drive, DC/DC Converter

2. Motor Drive

J377 Datasheet PDF

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