MOSFET

K2232 PDF Datasheet – 60V, 25A, N-ch, MOSFET – Toshiba

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This post explains for the MOSFET.

The Part Number is K2232, 2SK2232.

The function of this semiconductor is 60V, 25A, N-channel MOSFET.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Preview images :

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K2232 transistor pinout

Description

The K2232 is Silicon N Channel MOS Type Field Effect Transistor. This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. 4-V gate drive

2. Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.)

3. High forward transfer admittance : |Yfs| = 16 S (typ.)

4. Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)

5. Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 25 A

4. Allowable Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Chopper Regulator

2. DC−DC Converter and Motor Drive

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K2232 pdf datasheet

K2232 PDF Datasheet

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MDD14N25 Datasheet – 14N25 PDF – N-ch, 250V, MOSFET

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Part Number: MDD14N25, 14N25

Function: 250V, N-Channel POWER MOSFET

Package: TO-252 Type

Manufacturer: MagnaChip

Image

MDD14N25

MDD14N25 == ME15N25

Description

This is 250V, 10.2A, 0.28 Ohm, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.

 

Applications

1. DC/DC Converter

2. Load Switch

3. LCD/ LED Display inverter

MDD14N25 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-Source Voltage : Vdss = 250 V

2. Gate-Source Voltage : Vgss = ± 30 V

3. Peak Diode Recovery dv/dt : dv/dt = 4.5 V/ns

4. Repetitive Avalanche Energy : EAR = 6.94 mJ

5. Avalanche current : IAR = 10.2 A

6. Single Pulse Avalanche Energy : EAS = 550 mJ

7. Junction and Storage Temperature Range : TJ, Tstg = -55 ~ 150 °C

MDD14N25 Datasheet


MDD14N25 pdf

Datasheet Download :  [ ME15N25.PDF ]

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