K4111 PDF Datasheet – 600V, 10A, N-ch, MOSFET – Toshiba

This post explains for MOSFET.

The Part Number is K4111, 2SK4111.

The function of this semiconductor is N-channel 600V, 10A, MOSFET.

The package is TO-220 Type.

Manufacturer: Toshiba

Preview images :

1 page
K4111 mosfet pinout

Description

K4111 is Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K4111 pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K4111 PDF Datasheet

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P55NF06 Datasheet PDF – 60V, 50A, N-ch, Power MOSFET

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: STP55NF06, Marking : P55NF06

Function: N-CHANNEL 60V – 0.015 Ω- 50A STripFET II POWER MOSFET

Package: TO-220, D2PAK, TO-220FP Type

Manufacturer: ST Microelectronics

Image

P55NF06 mosfet

Description

The P55NF06 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ST Microelectronics, NXP Semiconductors. Power MOSFETs are commonly used in a variety of power conversion and switching applications, including power supplies, motor drives, and switching power amplifiers.

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.015 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

Pinout

P55NF06 datasheet pdf

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Channel temperature: Tch = 175 °C

5. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. HIGH CURRENT, HIGH SWITCHING SPEED

2. MOTOR CONTROL, AUDIO AMPLIFIERS

3. DC-DC & DC-AC CONVERTERS

4. AUTOMOTIVE

 

Other data sheets are available within the file: STB55NF06, STP55NF06

P55NF06 Datasheet PDF

P55NF06 pdf


 

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