MOSFET

72TO2GH PDF Datasheet – 25V, 62A, MOSFET ( AP72T02GH )

Posted on by pinout

Part Number: 72T02GH, AP72TO2GH, AP72T02GH

Function: 25V, 62A, N-Channel Power MOSFET

Package: TO-252, TO-251 Type

Manufacturer: Advanced Power Electronics

Images:

72T02GH datasheet mosfet

Description

This is 25V, 62A, N-Channel Power MOSFET.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP72T02GJ) are available for low-profile applications.

[…]

Pinout

72TO2GH pinout

Features

1. Simple Drive Requirement
2. Low On-resistance
3. Fast Switching Characteristic
4. RoHS Compliant

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 62 A
4. Total Power Dissipation: Pd = 60 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

 

72TO2GH Datasheet


72TO2GH pdf

Related articles across the web

IRFV260 Datasheet PDF – 200V, 45A, N-Ch, MOSFET

Posted on by pinout

Part Number: IRFV260

Function: HEXFET Transistor / 200 Volt, 0.060 Ohm, HEXFET

Package: TO-258AA Type

Manufacturer: International Rectifier

Image and Pinouts:

IRFV260 datasheet

 

Description

HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high trans conductance.

components

HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required.

Features

1. Hermetically Sealed

2. Electrically Isolated

3. Simple Drive Requirements

4. Ease of Paralleling

5. Ceramic Eyelets

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 45 A

4. Max. Power Dissipation: Pd = 300 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: IRFV-260

 

IRFV260 Datasheet PDF Download


IRFV260 pdf