MOSFET

2SK2085 MOSFET – 100V, 1A, Transistor ( Datasheet PDF )

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Part Number: 2SK2085

Function: 100V, N-Channel MOSFET

Package: TO-92MOD type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK2085 datasheet

 

Description

This is 100V, 1A, Silicon N-Channel MOSFET.

Features

1. Low on-resistance

2. High speed switching

3. Low drive current

4. 4 V gate drive device can be driven from 5 V source

5. Suitable for Switching regulator, DC – DC converter

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 1 A

4. Channel dissipation: Pch = 0.9 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Application:

1. High speed power switching

 

 

2SK2085 Datasheet PDF Download


2SK2085 pdf

Other data sheets are available within the file: K2085

K4108 Datasheet – 500V, N-Ch MOSFET – Toshiba

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K4108, 2SK4108

Description

Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor

Package: TO-3P type

Manufacturer: Toshiba

Image
K4108 mosfet
Description

1. Low drain−source ON resistance  : RDS (ON)= 0. 21Ω(typ.)
2. High forward transfer admittance  : |Yfs| = 14 S (typ.)
3. Low leakage current  : IDSS= 100 μA (max) (VDS= 500 V)
4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Applications

1. Switching Regulator

Pinout

K4108 datasheet pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain source voltage: VDSS = 500 V
2. Drain gate voltage (RGS = 20 kΩ): VDGR = 500 V
3. Gate source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 150 W
5. Single-pulse avalanche energy : EAS = 960 mJ
6. Avalanche current : IAR = 20 A
7. Repetitive avalanche energy : EAR = 15 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C

K4108 Datasheet


 

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