This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K4108, 2SK4108
Description
Silicon N Channel MOS Type (π−MOSIII) Field Effect Transistor
Package: TO-3P type
Manufacturer: Toshiba
Image
Description
1. Low drain−source ON resistance : RDS (ON)= 0. 21Ω(typ.)
2. High forward transfer admittance : |Yfs| = 14 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 500 V)
4. Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Applications
1. Switching Regulator
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain source voltage: VDSS = 500 V
2. Drain gate voltage (RGS = 20 kΩ): VDGR = 500 V
3. Gate source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 150 W
5. Single-pulse avalanche energy : EAS = 960 mJ
6. Avalanche current : IAR = 20 A
7. Repetitive avalanche energy : EAR = 15 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C
