K2843 Datasheet – 600V, 10A, N-ch, MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K2843, 2SK2843

Description

Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor

Package: TO-220 type

Manufacturer: Toshiba

Image

K2843 datasheet pdf pinout

Description

This is 600V, 10A, MOSFET.

Features

1. Low drain−source ON resistance  : RDS (ON)= 0.54 Ω(typ.)
2. High forward transfer admittance  : |Yfs| = 9.0 S (typ.)
3. Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)
4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K2843 mosfet toshiba

Absolute Maximum Ratings (Ta = 25°C)

1. Drain source voltage: VDSS = 600 V
2. Drain gate voltage (RGS = 20 kΩ): VDGR = 600 V
3. Gate source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : EAS = 363 mJ
6. Avalanche current : IAR = 10 A
7. Repetitive avalanche energy : EAR = 5.0 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C

Applications:

1. Chopper Regulator, DC−DC Converter and Motor Drive

K2843 Datasheet


 

Related articles across the web

K6A60DR PDF – 600V, 6A, N-Channel MOSFET, TK6A60D

Part Number: K6A60D, K6A60DR

Function: 600V, 6A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

K6A60DR datasheet transistor

Description

This is 600V, 6A, Silicon N-Channel MOS Type Field Effect Transistor.

 

Features

1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3.0 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Pinout

K6A60DR pinout mosfet

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Drain peak current : ID(pulse) = 24 A

5. Drain power dissipation (Tc = 25°C) : Pd = 40 W

6. Avalanche current : IAR = 6 A

7. Repetitive avalanche energy : Ear = 4.0 mJ

8. Storage temperature: Tstg = +150 °C

 

 

Applications:

1. Switching Regulator

K6A60D Datasheet


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