MOSFET archives - Page 329 of 1244

Features

1. Super High Dense Cell Design

2. Reliable and Rugged

3. Lead Free Available (RoHS Compliant)

Pinout:

Absolute maximum ratings ( Ta = 25°C )

1. Drain-Source Voltage : VDSS = 20 V

2. Gate-Source Voltage : VGSS = ±10 V

3. Continuous Drain Current : ID = 6 A

4. Diode Continuous Forward Current : Is = 1.7 A

5. Maximum Power Dissipation : 1.0 W

Applications:

1. Power Management in Notebook Computer

2. Portable Equipment and Battery Powered Systems

Other data sheets are available within the file: SM8205

Part Number: P0603BDG

Function: 30V, 75A, N-Channel MOSFET

Package: TO-252 Type

Manufacturer: NIKO-SEM ( www.niko-sem.com )

Image

Description

The P0603BDG is 30V, 75A, N-Channel Logic Level Enhancement Mode Field Effect Transistor.

Product Summary : V(BR)DSS = 30V, RDS(ON) = 6.5mOhm, ID = 75A

Pinout

ABSOLUTE MAXIMUM RATINGS ( Tc = 25 °C )

0. 1. Drain to source voltage: VDSS = 30 V

1. Gate-Source Voltage : VGS = ±20 V

2. Continuous Drain Current : Id = 75 A

3. Pulsed Drain Current : IDM = 170 A

4. Avalanche Current : IAS = 40 A

5. Avalanche Energy ( L = 0.1mH ) : EAS = 140 mJ

6. Repetitive Avalanche Energy ( L = 0.05mH ) : EAR = 5.6 mJ

7. Power Dissipation: Pd = 60W