2SK2973 Datasheet PDF – 17V, RF Power MOSFET – Mitsubishi

Part Number: 2SK2973

Function: 17V, RF POWER MOSFET

Package: SOT-89 Type

Manufacturer: MITSUBISHI ELECTRIC

Image and Pinouts:

2SK2973 datasheet

 

Description

The 2SK2973 is a MOSFET type transistor specifically designed for VHF/UHF power amplifiers applications.

Features

1. High power gain : Gpe>13dB, @Vdd=9.6V,f=450MHz,Pin=17dBm

2. High efficiency : 55% typ.

3. Source case type SOT-89 package(connected internally to source)

Absolute Maximum Ratings

1. Drain to source voltage : Vdss = 17 V

2. Gate to source voltage : Vgss = ± 10 V

3. Channel dissipation (Tc=25°C) : 1.5 W

Application:

1. For drive stage and output stage of power amplifiers in VHF/UHF band portable radio sets.

Other data sheets are available within the file: K2973

2SK2973 Datasheet PDF Download


2SK2973 pdf

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2SK950 Datasheet PDF – 500V, 6A, N-Ch, MOSFET – Fuji

Part Number: 2SK950, K950

Function: 500V, 6A, N-Ch, MOSFET

Package: TO-220AB Type

Manufacturer: Fuji Electric

Image:

2SK950 datasheet mosfet transistor

Description

This is Fuji, 500V, 6A, N-channel Silicon Power MOSFET.

Features

1. High Speed Switching
2. Low on-resistance
3. No secondary breakdown
4. Low driving power
5. High voltage

Applications:

1. Switching regulators
2. UPS
3. DC-DC converters
4. General purpose powe amplifer

Pinouts:

2SK950 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V
2. Drain current: ID = 6 A
3. Drain peak current : ID(pulse) = 24 A
4. Body to drain diode reverse drain current : IDR = 6 A
5. Gate to source voltage: VGSS = ± 20 V
6. Power dissipation : Pd = 80 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 ~ +150 °C

Other data sheets are available within the file: K950

2SK950 Datasheet PDF Download


2SK950 pdf