4NF20L Datasheet – 200V, Id=1A, N-Ch MOSFET – ST

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 4NF20L, STN4NF20L

Function: N-channel 200 V, 1 A, Power MOSFET

Package: SOT-223 Type

Manufacturer: STMicroelectronics

Image:

4NF20L mosfet

Description

This is N-channel 200 V, 1.1 Ω, 1 A,  Low Gate Charge STripFET II Power MOSFET.

This N-channel 200 V realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.

 

Features

1. 100% avalanche tested

2. Low gate charge

3. Exceptional dv/dt capability

 

Pinout

4NF20L datasheet pinout

 

Absolute maximum ratings :

1. Gate-source voltage : VGS = ± 20 V

2. Drain current continuous (TC = 25 °C) : ID  = 1 A

3. Drain current continuous (TC = 100 °C0 : ID = 0.63 A

4. Drain current pulsed : IDM = 4 A

5. Total dissipation at TC = 25 °C : PTOT = 3.3 W

6. Peak diode recovery voltage slope : dv/dt = 20 V/ns

Applications:

1. Switching

4NF20L Datasheet


 

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2SJ553L-E Datasheet PDF – P-Ch, 60V, 30A, MOSFET

Part Number: 2SJ553L-E

Function: -60V, -30A, P-Channel MOSFET

Package: LDPAK type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SJ553L-E datasheet

 

Description

This is -60V, -30A, Silicon P-Channel MOSFET.

Features

1. Low on-resistance  RDS(on)= 0.028Ω typ.

2. Low drive current.

3. 4V gate drive devices.

4. High speed switching.

Pinouts:

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 30 A

4. Channel dissipation: Pch = 75 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: 2SJ553, 2SJ553L, 2SJ553S, J553

 

2SJ553L-E Datasheet PDF Download


2SJ553L-E pdf