MOSFET

2SJ553L-E Datasheet PDF – P-Ch, 60V, 30A, MOSFET

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Part Number: 2SJ553L-E

Function: -60V, -30A, P-Channel MOSFET

Package: LDPAK type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SJ553L-E datasheet

 

Description

This is -60V, -30A, Silicon P-Channel MOSFET.

Features

1. Low on-resistance  RDS(on)= 0.028Ω typ.

2. Low drive current.

3. 4V gate drive devices.

4. High speed switching.

Pinouts:

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 30 A

4. Channel dissipation: Pch = 75 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: 2SJ553, 2SJ553L, 2SJ553S, J553

 

2SJ553L-E Datasheet PDF Download


2SJ553L-E pdf

K3868 Datasheet – 500V, 5A, N-ch, MOSFET – Toshiba

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3868

Function: Silicon N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image

K3868 mosfet

Description

This is 500V, 5A, Silicon N-Channel MOSFET.

Features

1. Low drain-source ON resistance: RDS (ON)= 1.3 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 3 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3868 datasheet pinout

 

Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 500 V

2. Drain-gate voltage (RGS =20 kΩ): VDGR = 500 V

3. Gate-source voltage  : VGSS  = ±30 V

4. Drain current ( DC ) :  ID = 5A

5. Single pulse avalanche energy : Eas = 180 mJ

6. Avalanche current : IAR = 5 A

7. Repetitive avalanche energy  : EAR = 3.5 mJ

 

Applications:

1. Switching Regulator

Other data sheets are available within the file: 2SK3868

K3868 Datasheet