MOSFET archives - Page 40 of 1244

This post explains for the MOSFET.

The Part Number is K13A60D, TK13A60D.

The function of this semiconductor is 600V, 13A, N-Channel MOSFET.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

K13A60D Datasheet

Description

K13A60D is 600V, 13A, Silicon N-Channel MOS Type Field Effect Transistor.

1. Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 6.5 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) […]

K13A60D pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Drain Power Dissipation: Pd = 50 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

Description

The P1403EVG is -30V, -11A, P-Channel Logic Level Enhancement Mode Field Effect Transistor.

Pinouts

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 30V

2. Gate to source voltage: VGSS = ± 25V

3. Drain current: ID = – 11 A

4. Drain Power Dissipation: Pd = 2.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C