K4212 Datasheet – 25V, 48A, N-Ch, Power MOSFET ( PDF )

Part Number: K4212

Function: 25V, 48A, MOS FIELD EFFECT TRANSISTOR

Package: TO-252 Type

Manufacturer: Renesas

Images:

1 page
K4212 datasheet pdf

Description

The K4212 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

1. Low on-state resistance

(1) RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 30 A)

(2) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A)

2. Low total gate charge

(1) QG = 27 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)

3. 4.5 V drive available

4. Avalanche capability ratings

2 page
K4212 mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 48 A

4. Total Power Dissipation: Pd = 1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K4212 Datasheet PDF

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9T16GH Datasheet – 20V, 25A, Power MOSFET, AP9T16GH

Part Number: 9T16GH, AP9T16GH

Function: 20V, 25A, N-Channel Enhacement Mode Power MOSFET

Package: TO-252(H), TO-251(J)

Manufacturer: Advanced Power Electronics

Images:

9T16GH datasheet pdf

 

Description

9T16GH is 20V, 25A, Power MOSFET.

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

1. Low Gate Charge

2. Capable of 2.5V gate drive

3. Single Drive Requirement

4. RoHS Compliant

 

9T16GH pinout mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 16 V

3. Drain current: ID = 25 A

4. Total Power Dissipation: Pd = 25 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

9T16GH Datasheet