2SK1596 MOSFET – 30V, 40A, Transistor ( Datasheet PDF )

Part Number: 2SK1596

Function: 30V, 40A, N-channel MOSFET

Package: TO-220 Type

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

2SK1596 datasheet

 

Description

The 2SK1596 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Features

1. Low On-State Resistance

2. Low Ciss = 3,400 pF Type.

3. Built-in G-S Gate Protection Diode

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 40 A

4. Total Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

2SK1596 Datasheet PDF Download


2SK1596 pdf

Other data sheets are available within the file: K1596

IRFI720G Datasheet – 400V, MOSFET, Transistor

Part Number: IRFI720G

Function: HEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 2.6 A

Package: TO-220 Type

Manufacturer: Vishay Semiconductors

Image and Pinouts:

IRFI720G datasheet

 

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.

Features

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS(t = 60 sf = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available

Other data sheets are available within the file: IRFI720, IRF-I720G, SiHFI720G

 

IRFI720G Datasheet PDF Download


IRFI720G pdf