Part Number: SVF12N60F

Function : 12A, 600V, N-Channel MOSFET

Package :  TO-220F-3L Pin Type

Manufacturer: Silan Microelectronics

Image

Description

The SVF12N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Pinout

Features

1. 12A, 600V, RDS(on)(typ)=0.58Ω @VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

Absolute maximum ratings ( Tc=25°C )

1. Drain-Source Voltage : VDS = 600 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : ID = 12 A
4. Drain Current Pulsed : IDM = 48 A
5. Power Dissipation: Pd = 51 W
6. Operation Junction Temperature Range : TJ = -55～+150 °C
7. Storage Temperature Range : Tstg = -55～+150 °C

Other data sheets are available within the file: SVF12N60, SVF12N60S, SVF12N60K

SVF12N60F Datasheet PDF

 

Related articles across the web

• 14D471K Datasheet – 14Pie, 470V, Varistor

Part Number: K2481

Function: 900V, 4A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Package: TO-220 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

 

Description

The K2481 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Renesas Electronics.

It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SK2481 has a maximum drain-source voltage of 900V and a maximum drain current of 4A,
making it suitable for high voltage, high current applications.

 

Features

1. Low On-Resistance : RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)

2. Low Ciss Ciss = 900 pF TYP.

3. High Avalanche Capability Ratings

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 v

3. Drain current: ID = 4 A

4. Total Power Dissipation: Pd = 1.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 2SK2481

 

K2481 Datasheet PDF Download