Part Number: MDD1654

Function: Single N-channel Trench MOSFET. 30V, 55A, 6.0mΩ.

Package: TO-252 Type

Manufacturer: MagnaChip

Image:

Description

The MDD1654 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load Switching and general purpose applications.

Features

1. VDS = 30V
2. ID = 55A @VGS = 10V
3. RDS(ON)
(1) < 6.0m @VGS = 10V
(2) < 9.5m @VGS = 4.5V

Absolute Maximum Ratings (Tc = 25°C)

1. Drain-Source Voltage : VDSS = 30 V
2. Gate-Source Voltage : VGSS = ±20 V
3. Continuous Drain Current : Id = 55 A
4. Pulsed Drain Current : IDM = 150 A
5. Power Dissipation: Pd = 29 W
6. Single Pulse Avalanche Energy : EAS = 45 mJ
7. Junction and Storage Temperature Range : TJ, Tstg = -55~150°C

 

Other data sheets are available within the file: D1654

MDD1654 Datasheet PDF

 

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Part Number: 2SK1831

Function: 10A, 450V, N-Channel MOSFET

Pacakge : TO-3PFM Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

Description

This is 450V, 10A, Silicon N-Channel MOSFET.

 

Features

1. Low on-resistance

2. High speed switching

3. Low drive current

4. No secondary breakdown

5. Suitable for switchingregulator, DC-DC converter

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : Vdss = 450 V

2. Gate to source voltage: VGSS = ±30 V

3. Drain current: ID = 10 A

4. Drain peak current : ID(pulse) = 30 A

5. Body to drain diode reverse drain current : IDR = 10 A

6. Channel dissipation: Pch = 50 W

 

Applications:

1. High speed power switching

Other data sheets are available within the file: 2SK1832, K1831, K1832

2SK1831 Datasheet PDF Download

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