Part Number: MDF4N65B
Function: N-Channel MOSFET 650V, 4.0A, 2.2Ω
Package: TO-220F Type
Manufacturer: MagnaChip
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Description
This is 650V, 4.0A, N-Channel MOSFET.
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
1. VDS = 650V
2. ID = 4.0A @ VGS = 10V
3. RDS(ON) ≤ 2.2 D @ VGS = 10V
Pinout
Absolute Maximum Ratings (Tc = 25°C)
1. Drain-Source Voltage : VDSS = 650 V
2. Gate-Source Voltage : VGSS = ±30 V
3. Continuous Drain Current : Id = 4.0 A
4. Pulsed Drain Current : IDM = 16 A
5. Power Dissipation: Pd = 35 W
6. Single Pulse Avalanche Energy : EAS = 3.5 mJ
7. Junction and Storage Temperature Range : TJ, Tstg = -55~150°C
Applications
1. Power Supply
2. PFC
3. High Current, High Speed Switching
Other data sheets are available within the file: 4N65B
MDF4N65B Datasheet PDF
