Semiconductor Informations
Part Number: MRF175GV
Function: RF POWER FIELD-EFFECT TRANSISTOR
Package: CASE 375–04, STYLE 2
Manufacturer: ASI ( Advanced Semiconductor )
Image and Pinouts:
This 65V, 26A, N-Channel MOSFET.
The ASI MRF175GV is a N-Channel Enhancement-Mode Push Pull MOSFET, Designed for FM, and TV Solid State Transmitter Applications up to 500 MHz.
Maximum Ratings
1. Drain current : Id = 26A
2. Drain to source voltage : Vdss = 65 V
3. Pdiss = 400 W
Part Number: SUB85N06-05
Function: N-Channel, 60V, 85A, (D-S) 175°C MOSFET
Manufacturer: Vishay Semiconductors
Pinouts:
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
1. N-Channel Vertical DMOS
2. Macro Model (Subcircuit Model)
3. Level 3 MOS
4. Apply for both Linear and Switching Application
5. Accurate over the −55 to 125°C Temperature Range
6. Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
Other data sheets are available within the file: SUB85N0605, SUB85N06
