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Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

General features :

1. Exceptional dv/dt capability

2. 100% avalanche tested

3. Application oriented characterization

Applications:

1. HIGH-EFFICIENCY DC-DC CONVERTERS

2. UPS AND MOTOR CONTROL

3. AUTOMOTIVE

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: MDD1051

Function: 150V, 28A, N-channel MOSFET

Package: D-PAK ( TO-252 ) Type

Manufacturer: MagnaChip Semiconductor

Image

MDD1051 mosfet datasheet

Description

The MDD1051 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1051 is suitable device for Synchronous Rectification For Server and general purpose applications.

Pinouts:

MDD1051 transistor pinout

Features

1. VDS = 150V

2. ID = 28A @VGS = 10V

3. RDS(ON) (MAX) < 46.0mΩ @VGS = 10V

4. 100% UIL Tested

5. 100% Rg Tested

Absolute Maximum Ratings (Tc = 25°C) :

1. Drain to source voltage: VDSS = 150 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 28 A

4. Drain power dissipation : PD = 70 W

5. Single pulse avalanche energy : Eas = 50 mJ

6. Channel temperature: Tch = -55 to +150 °C

7. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: MDD-1051

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STP60NF06 Datasheet PDF – 60V, 60A, MOSFET

Description

STP60NF06 Datasheet PDF Download

MDD1051 Datasheet PDF – 150V, 28A, N-Channel MOSFET

Description

Features

MDD1051 Datasheet PDF Download

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