ZVP4525ZTA Datasheet PDF – 250V, P-Ch, MOSFET

Part Number: ZVP4525ZTA

Function: 250 V, P-channel enhancement mode MOSFET

Package: SOT89 and SOT23-6 Type

Manufacturer: Zetex (Diodes)

Image and Pinouts:

ZVP4525ZTA datasheet

 

Description

This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits.

 

Features

1. High voltage

2. Low on-resistance

3. Fast switching speed

4. Low gate drive

5. Low threshold

6. Complementary N-channel Type ZVN4525Z

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 250 V

2. Gate to source voltage: VGSS = ± 40 V

3. Drain current: ID = – 205 mA

4. Power Dissipation: Pd = 1.2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Earth Recall and dialling switches

2. Electronic hook switches

3. High Voltage Power MOSFET Drivers

4. Telecom call routers

5. Solid state relays

 

 

ZVP4525ZTA Datasheet PDF Download


ZVP4525ZTA pdf

Other data sheets are available within the file:

ZVP4525, ZVP4525GTA, ZVP4525GTC, ZVP4525TA, ZVP4525TC

FCPF11N60F Datasheet PDF – 600V, 11A, MOSFET, Transistor

Part Number: FCPF11N60F

Function: N-Channel MOSFET / 600 V, 11 A, 380 mOhm

Package: TO-220F Type

Manufacturer: Fairchild Semiconductor

Inage and Pinouts:

FCPF11N60F datasheet

 

Description

The FCPF11N60F is 600V, 11A, N-Channel SuperFET FRFET MOSFET.

SuperFET MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance.

This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.

Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super FET FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Features

1. 600 V @ TJ = 150°C

2. Typ. RDS(on) = 320 mΩ

3. Fast Recovery Type (trr = 120 ns)

4. Ultra Low Gate Charge (Typ. Qg = 40 nC)

5. Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)

6. 100% Avalanche Tested

7. RoHS compliant

 

Applications:

1. LCD/LED/PDP TV

2. Solar Inverter

3. Lighting

4. AC-DC Power Supply

Other data sheets are available within the file: 11N60T, FCPF11N60

FCPF11N60F Datasheet PDF Download


FCPF11N60F pdf