MOSFET

FDN302P Datasheet – P-Ch, 20V, 2.4V, MOSFET

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Part Number: FDN302P, Marking : 302

Function: P-Channel 2.5V Specified PowerTrench MOSFET

Package: SuperSOT-3 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

FDN302P datasheet

 

Description

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage(2.5V – 12V).

Features

• –20 V, –2.4 A.

(1) Rds(on)= 0.055 Ω@ Vgs= –4.5 V
(2) Rds(on)= 0.080 Ω@ Vgs= –2.5 V

• Fast switching speed
• High performance trench technology for extremely low Rds(on)

• SuperSOT -3 provides low Rds(on) and 30% higher power handling capability than SOT23 in the same footprint

Applications:

• Power management

• Load switch

• Battery protection

Other data sheets are available within the file: FDN302

 

FDN302P Datasheet PDF Download


FDN302P pdf

K2929 Datasheet PDF – 60V, 25A, N-Ch, MOSFET

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Part Number: K2929

Function: 25A, 60V, N Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K2929 datasheet

 

Description

This is Silicon N Channel MOSFET.

Features

1. Low on-resistance : RDS=0.026 Ωtyp.
2. High speed switching
3. 4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 25 A
4. Drain peak current : ID(pulse) = 100 A
5. Body-drain diode reverse drain current : IDR = 25 A
6. Avalanche current : IAP = 20 A
7. Avalanche energy : EAR = 34 mJ
8. Channel dissipation: Pch  = 50 W

Application

1. High Speed Power Switching

Other data sheets are available within the file: 2SK2929

K2929 Datasheet PDF Download


K2929 pdf