Part Number: IRFP254N

Function: 250V, 23A, HEXFET Power MOSFET

Package: TO-247AC Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

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Description

This is HEXFET Power MOSFET. ( VDSS = 250 V, RDS(on) = 125 mOhm, ID = 23 A).

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. 175°C Operating Temperature

4. Fast Switching

5. Fully Avalanche Rated

6. Ease of Paralleling

7. Simple Drive Requirements

Pinout:

Other data sheets are available within the file: IRFP254

IRFP254N Datasheet PDF Download

Part Number: K2959

Function: 50A, 30V, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

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Description

This is Silicon N-Channel MOSFET.

Features

1. Low on-resistance : RDS(on)= 7mΩ typ.
2. 4V gate drive devices.
3. High speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 50 A
4. Drain peak current : ID(pulse)  = 200 A
5. Body-drain diode reverse drain current : IDR = 50 A
6. Channel dissipation: Pch = 75 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

Applications

1. High Speed Power Switching

Other data sheets are available within the file: 2SK2959

K2959 Datasheet PDF Download