This post explains for the MOSFET.

The Part Number is 40N06.

The function of this semiconductor is 60V, N-Channel MOSFET, Transistor.

The Package is TO-220C Type

Manufacturer: Inchange Semiconductor

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Description

40N06 is 60V, 40A, N-Channel MOSFET. 

 

Features

1. Drain Current ID= 40A@ TC=25℃

2. Drain Source Voltage : VDSS= 60V(Min)

3. Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max)

4. Fast Switching

5. Minimum Lot-to-Lot variations for robust device performance and reliable operation

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 40 A

4. Power Dissipation: Pd = 120 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching power supplies, converters, AC and DC motor controls

 

 

40N06 PDF Datasheet

Part Number: K4108, 2SK4108

Function: 500V, 20A, MOSFET

Package: TO-3P Type

Manufacturer: Toshiba Semiconductor

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Description

The K4108 is 500V, 20A, Silicon N-Channel MOS Type Field Effect Transistor. This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)

2. High forward transfer admittance : |Yfs| = 14 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Drain Power Dissipation: Pd = 150 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Applications:

1. Switching Regulator

 

K4108 PDF Datasheet