MOSFET

K4115 PDF Datasheet – 900V, 7A, N-ch MOSFET – Toshiba

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This post explains for the MOSFET.

The Part Number is K4115, 2SK4115.

The function of this semiconductor is 900V, 7A, N-channel MOSFET.

The package is TO-3P Type

Manufacturer: Toshiba Semiconductor

Preview images :

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K4115 pdf pinout

Description

K4115 is Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

 

2 page
K4115 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K4115 PDF Datasheet

MDHT4N20Y PDF Datasheet – 200V, 0.85A, N-Ch, MOSFET

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Part Number: MDHT4N20Y

Function: 200V, 0.85A, N-Channel MOSFET

Package: SOT-223 Type

Manufacturer: MagnaChip

Images:MDHT4N20Y pdf pinout

Description

The MDHT4N20Y uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. This MOSFET is suitable device for LED TV and general purpose applications.

 

Features

1. VDS = 200V

2. ID = 0.85A

3.  RDS(ON) ≤ 1.35Ω

MDHT4N20Y datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 0.85 A

4. Total Power Dissipation: Pd = 2.1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Power Supply

2. PFC

3. LED TV

MDHT4N20Y PDF Datasheet