Part Number: 2SK2980

Function: Silicon N Channel MOSFET

Package: MPAK Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

 

Description

This is 30V, 1A, N-Channel MOSFET.

Features

1. Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA)
2. 2.5V gate drive devices.
3. Small package (MPAK)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = +12 V, –10 V
3. Drain current: ID = 1.0 A
4. Drain peak current : ID(pulse) = 4 A
5. Channel dissipation: Pch = 0.8 W

Applications:

1. High Speed Power Switching

2SK2980 Datasheet PDF Download

 

Other data sheets are available within the file: K2980

Part Number: 2SJ180

Function: -30V, ± 1A, P-Channel MOSFET

Manufacturer: NEC => Renesas Technology

Image and Pinouts:

 

Description

The 2SJ180, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5V power source.

As the MOS FET has low on-state resistance and excellent switching characteristtics, it is suitable for driving actuators such as motors, relays, and solenoids.

 

Features

1. Directly driven by ICs having a 5 V power supply.

2. Low On-state resistance

3. Bidirectional zener diode for protection is incorporated in between the gate and the source.

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = ± 1 A

4. Total Power Dissipation: Pd = 1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Other data sheets are available within the file: J180

 

2SJ180 Datasheet PDF Download