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Part Number: RJK0389DPA

Function: 30V, Silicon N-Channel Power MOSFET

Package: 8 Pin WPAK-D2 Type

Manufacturer: Renesas Electronics

Image:

RJK0389DPA datasheet

Description

This is N-Channel Power MOSFET with Schottky Barrier Diode

Features

1. Low on-resistance

2. Capable of 4.5 V gate drive

3. High density mounting

4. Pb-free

5. Halogen-free

Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Channel dissipation: Pch = 10 W

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High Speed Power Switching

RJK0389DPA Datasheet PDF Download

Other data sheets are available within the file:

RJK0389, RJK0389DPA-00, RJK0389DPA-00-J53

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General-Purpose Operational Amplifier

Description

APM4546J is Dual Enhancement Mode MOSFET (N-and P-Channel). A Dual Enhancement Mode MOSFET, also known as a Dual E-mode MOSFET or Complementary MOSFET, is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that consists of both N-channel and P-channel MOSFETs in a single package. These two types of MOSFETs complement each other, allowing for enhanced functionality and simplification in certain circuit designs.

Features:

• N-Channel 30V/8A,
(1) R DS(ON) =20mΩ (typ.) @ V GS = 10V
(2) RDS(ON) =27mΩ (typ.) @ VGS = 4.5V

• P-Channel -30V/-6A,
(1) RDS(ON) =38mΩ (typ.) @ VGS =-10V
(2) RDS(ON) =46mΩ (typ.) @ V GS =-4.5V

• Super High Dense Cell Design

• Reliable and Rugged

• Lead Free Available (RoHS Compliant)

Applications:

1. Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems […]

MOSFET

RJK0389DPA Datasheet PDF – 30V, N-Ch, MOSFET – Renesas

Description

Features

RJK0389DPA Datasheet PDF Download

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APM4546J PDF Datasheet – Dual Mode MOSFET – Anpec

Description

APM4546J PDF Datasheet