IRF830 Datasheet – 500V, 4.5A, HEXFET Power MOSFET

Part Number: IRF830

Function: 500V, 4.5A, HEXFET Power MOSFET

Package:  TO-220AB Type

Manufacturer: International Rectifier

Image

IRF830 MOSFET Transistor

Description

Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

N-channel, enhancement mode eld-effect power transistor intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications.

 

Pinout

IRF830 datasheet pinout

 

Features

1. Dynamic dv/dt Rating

2. Repetitive Avalanche Rated

3. Fast Switching

4. Ease of Paralleling

5. Simple Drvie Requirements.

[ … ]

 

IRF830 Datasheet PDF Download

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K1341 MOSFET – N-ch, 900V, 6A, Transistor, TO-3P

Part Number: K1341

Function: 900V, 6A, Silicon N-Ch, MOSFET, Transistor

Package: TO-3P Type

Manufacturer: Renesas Electronics

Image and Pinouts:

K1341 datasheet

 

Description

This is 900V, 6A, Silicon N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4 No secondary breakdown
5. Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Channel dissipation: Pch = 100 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Application:

1. High speed power switching

Other data sheets are available within the file: 2SK1341

K1341 Datasheet PDF Download


K1341 pdf