VOW3120 PDF – Widebody 2.5 A IGBT and MOSFET Driver

Part Number: VOW3120

Function: Widebody 2.5 A IGBT and MOSFET Driver / Icc= 2.5 mA maximum supply current

Package: DIP, SO 8 Pin Type

Manufacturer: Vishay Semiconductors

Pinouts:

VOW3120 datasheet

 

Description

The VOW3120 consists of an infrared light emitting diode optically coupled to an integrated circuit with a power output stage.

This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control and inverter applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices.

The voltage and current supplied by this optocoupler makes it ideallysuited for directly driving
IGBTs with ratings up to 1200 V/100 A. For IGBTs with higher ratings, the VOW3120 can be used to drive a discrete power stage which drives the IGBT gate.

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Features

1. 2.5 A minimum peak output current

2. 10 mm minimum external creepage distance

3. 50 kV/μs (typ.) common mode rejection

4. ICC = 2.5 mA maximum supply current

5. Under voltage lock-out (UVLO) with hysteresis

6. Wide operating VCC range: 15 V to 32 V

7. Industrial temperature range: -40 °C to +100 °C

 

Applications:

1. Industrial welding equipment

2. Motor drives

3. Industrial inverters

4. Commercial and residential solar inverters

5. Wind generator inverters

 

VOW3120 Datasheet PDF Download


VOW3120 pdf

Other data sheets are available within the file: V0W3120, VOW3120-X017T

2SK1954 Datasheet – 180V, 4A, N-Channel MOSFET – NEC

Part Number: 2SK1954

Function: Switching N-channel Power MOSFET

Package: TO-251, TO-252 Pin type

Manufacturer: NEC, Renesas

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Description

The 2SK1954 is N-channel MOS Field Effect Transistor designed for high voltage switching applications.

Pinout

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Features

1. Low On-state Resistance
RDS(on) = 0.65 Ω MAX. (VGS = 10 V, ID = 2.0 A)

2. Low Ciss: Ciss = 300 pF TYP.

3. Built-in G-S Gate Protection Diode

4. High Avalanche Capability Ratings

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Absoulte maximum ratings ( Ta =25’C )

1. Drain to Source Voltage : VDSS = 180 V
2. Gate to Source Voltage : VGSS = ± 20 V
3. Drain Current (DC) : Id (DC) = ± 4.0 A
4. Channel Temperature : Tch = 150 ‘C

2SK1954 Datasheet PDF


 

Other data sheets are available within the file: K1954, 2SK1954Z, K1954-Z

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