BSS84AKT Datasheet – 50V, 150mA, P-Ch, MOSFET, Transistor

Part Number: BSS84AKT

Package: Z6

Function: 50 V, 150 mA P-channel Trench MOSFET

Package: SOT-416 (SC-75) Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

BSS84AKT datasheet

 

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

1. Logic-level compatible

2. Very fast switching

3. Trench MOSFETtechnology

4. ESD protection up to 1 kV

5. AEC-Q101 qualified

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = -150 mA

4. Total Power Dissipation : Ptot = 250 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

Other data sheets are available within the file: BSS84AK, BSS84A, BSS84A

 

BSS84AKT Datasheet PDF Download


BSS84AKT pdf

2SK3061 Datasheet PDF – N-Ch, 60V, 70A, MOSFET

Part Number: 2SK3061

Function: 60V, N-CHANNEL POWER MOSFET

Package : TO-220 (MP-45F) Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK3061 datasheet

Description

This is 60V, 70A, N-Channel MOSFET.

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Features

1.  Low on-state resistance :

(1) RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A)

(2) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, ID= 35 A)

2. Low Ciss: Ciss= 5200 pF TYP.

3. Built-in gate protection diode

4. Isolated TO-220 package

 

Equivalent Circut :

components

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 70 A

4. Total Power Dissipation : Pt = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: K3061

2SK3061 Datasheet PDF Download


2SK3061 pdf