K3868 PDF Datasheet – 500V, 5A, N-Ch, MOSFET – 2SK3868

Part Number: K3868, 2SK3868

Function: 500V, 5A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images: K3868 pdf pinout

Description

K3868 is 500V, 5A, Silicon N-Channel MOS Type Field Effect Transistor.

1. Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K3868 datasheet

Applications:

1. Switching Regulator

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

This post explains for the MOSFET.

The Part Number is K4145, 2SK4145.

The function of this semiconductor is N-Channel 60V, 84A, MOSFET.

The package is TO-220 Type

Manufacturer: NEC

Preview images :

K4145 pdf mosfet

The K4145 is 60V, 84A, N-channel MOS Field Effect Transistor.

1. Low on-state resistance : RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)

2. Low input capacitance : Ciss = 5300 pF TYP.

K4145 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = ± 84 A (Tc = 25°C)

4. Total Power Dissipation : Pt = 84 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High Current Switching