Part Number: HY3506P

Function: 60V, 190A, N-Channel MOSFET

Package: TO-220, TO-247 Type

Manufacturer: HOOYI Semicondcutor

Images:

Description

HY3506P is N-Channel Enhancement Mode MOSFET. 

Features

1. 60V, 190A : RDS(ON) = mW (typ.) @ VGS =10V

2. 100% avalanche tested

3. Reliable and Rugged

4.  Lead Free and Green Devices Available (RoHS Compliant)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 190 A (Tc = 25°C)

4. Maximum Power Dissipation: Pd = 306 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. Switching application

2. Power Management for Inverter Systems.

 

HY3506P PDF Datasheet

This post explains for the MOSFET.

The Part Number is K2350, 2SK2350.

The function of this semiconductor is 200V, 8.5A, N-Channel MOSFET.

The package is TO-220 Type.

Manufacturer: Toshiba Semiconductor

Preview images :

1 page

Description

K2350 is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. 4-V gate drive

2. Low drain−source ON-resistance : RDS (ON) = 0.26 Ω (typ.)

3. High forward transfer admittance : |Yfs| = 8 S (typ.)

4. Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)

5. Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

 

2 page

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 8.5 A

4. Drain Power Dissipation: Pd = 30 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

2. DC−DC Converter and Motor Drive

K2350 PDF Datasheet