Part Number: CS20N60A8H

Function: 600V, 20A, Silicon N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Huajing Microelectronics

Images:

Description

CS20N60A8H, the 600V, 20A, silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.

Features：

1. Fast Switching

2. Low ON Resistance(Rdson≤0.45Ω)

3. Low Gate Charge (Typical Data:61nC)

4. Low Reverse transfer capacitances(Typical: 20pF)

5. 100% Single Pulse avalanche energy Test

Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Power Dissipation: Pd = 250 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications：

1. Power switch circuit of adaptor and charger

 

CS20N60A8H PDF Datasheet

This post explains for the MOSFET.

The Part Number is K2401, 2SK2401.

The function of this semiconductor is 200V, 15A, N-channel MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

1 page

Description

K2401 is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 17 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)

4. Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

2 page

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 15 A

4. Drain Power Dissipation: Pd = 75 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Chopper Regulator, DC−DC Converter and Motor Drive

 

K2401 PDF Datasheet