MOSFET

86T02GH PDF Datasheet – 25V, MOSFET – AP86T02GH

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This post explains for the semiconductor AP86T02GH.

The Part Number is 86T02GH.

The function of this semiconductor is 25V, 75A, N-Channel Power MOSFET.

The package is TO-252, TO-251 Type

Manufacturer: Advanced Power Electronics

Preview images :

1 page
86T02GH pdf pinout

Description

The 86T02GH is N-Channel MOSFET. 

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP86T02GJ) is available for low-profile applications.

Features

1. Simple Drive Requirement

2. Low On-resistance

3. Fast Switching Characteristic

 

2 page
86T02GH datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 75 A

4. Total Power Dissipation: Pd = 75 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

86T02GH PDF Datasheet

K6A600 PDF – K6A60D, 600V, 6A, N-Channel MOSFET

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What is K6A600?

K6A60D is the correct part name. The K6A600 MOSFET is an N-channel device with a maximum drain-source voltage rating of 600 volts and a maximum continuous drain current rating of 6 amperes. It has a low on-resistance and fast switching speed, making it suitable for high-power switching applications.

Marking Code: K6A600, TK6A600

Corrector number : K6A60D, TK6A60D

Function: 600V, 6A, N-Channel MOSFET

Pacakage : TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

1 page
K6A600 pdf equivalent

Description

This is Silicon N-Channel MOS Type Field Effect Transistor. The K6A600 MOSFET is commonly used in electronic circuits that require high voltage and high current, such as power supplies, motor control circuits, and lighting systems.

Features

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

• High forward transfer admittance: |Yfs| = 3.0 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

3 page
K6A600 pinout datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V

2. Gate to source Voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K6A600 PDF Datasheet

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