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Part Number: 3NF06L

Function: N-CHANNEL 60V – 0.07 OHM – 4A STRIPFET II POWER MOSFET

Package: SOT-223 Type

Pinouts:

3NF06L datasheet

Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

1. Exceptional dv/dt capability
2. 100% avalanche tested
3. Low threshold drive

Absolute maximum ratings

1. Drain-source voltage : VDS = 60 V
2. Gate-source voltage : VGS = ±16 V
3. Drain current (continuous) at Tc = 25 °C : ID = 4 A
4. Drain current (continuous) at Tc = 100 °C : ID = 2.9 A
5. Drain current (pulsed) : IDM = 16 A
6. Total dissipation at Tpcb = 25 °C : PTOT = 3.3 W

Applications

Switching applications

Other data sheets are available within the file: STN3NF06L, Marking : 3NF06L

3NF06L Datasheet PDF Download

Description

1. Low drain−source ON resistance : RDS (ON) = 1.7 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 3.0 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain−source voltage: VDSS = 600 V
2. Drain−gate voltage (RGS = 20 kΩ): VDGR = 600 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain current DC : ID = 3.5 A
5. Drain power dissipation (Tc = 25°C) : PD = 35 W
6. Single pulse avalanche energy : EAS = 201 mJ

Applications

Chopper Regulator, DC−DC Converter and Motor Drive

Other data sheets are available within the file: K2750

MOSFET

3NF06L Datasheet PDF – Vds=60V, N-Channel MOSFET – ST

Description

3NF06L Datasheet PDF Download

2SK2750 Datasheet – 600V, 35W, N-Ch, MOSFET – Toshiba

Description

2SK2750 Datasheet PDF Download

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