This post explains for the MOSFET.

The Part Number is F13NK50Z, STF13NK50Z.

The function of this semiconductor is 500V, 11A, Power MOSFET.

The package is TO-220, TO-220FP, TO-247 Type.

Manufacturer: STMicroelectronics

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Description

The SuperMESH series is obtained through an extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs.

 

Features

1. Extremely high dv/dt capability

2. 100% avalanche tested

3. Gate charge minimized

4. Very low intrinsic capacitances

5. Very good manufacturing repeatability

Applications:

1. Switching application

2. N-channel MOSFETs are often used in power management circuits and battery protection circuits.

F13NK50Z PDF Datasheet

This post explains for the MOSFET.

The Part Number is K2608, 2SK2608.

The function of this semiconductor is 900V, 3A, N-Channel MOSFET.

Manufacturer: Toshiba Semiconductor, Package: TO-220AB type

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Description

The K2608 is 900V, 3A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.)

2. High forward transfer admittance : |Yfs|= 2.6 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3 A

4. Drain Power Dissipation: Pd = 100 W (Ta = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

K2608 PDF Datasheet

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