Part Number: P2NC60FP, STP2NC60FP

Function: 600V, 1.9A, PowerMesh MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: ST Microelectronics

Images:

Description

P2NC60FP is 600V, 1.9A, PowerMesh MOSFET. A PowerMesh MOSFET refers to a specific type of metal-oxide-semiconductor field-effect transistor (MOSFET) that is designed for high-power applications.

The PowerMESH is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

1. Voltage Rating (600V): This indicates the maximum voltage that the PowerMesh MOSFET can handle without sustaining damage or breakdown. In this case, the MOSFET is designed to operate safely up to 600 volts.

2. Current Rating (1.9A): This represents the maximum continuous current that the PowerMesh MOSFET is designed to handle under specified conditions. The MOSFET can safely carry currents up to 1.9 amperes without exceeding its thermal and electrical limits.

Features:

1. TYPICAL RDS(on) = 7 Ω

2. EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. NEW HIGH VOLTAGE BENCHMARK

5. GATE CHARGE MINIMIZED

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITH MODE POWER SUPPLIES (SMPS)

3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER  [ … ]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V

2. Gate to source Voltage: VGSS = ± 30 V

3. Drain current: ID = 1.9 A

4. Total Power Dissipation: Ptot =30 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

P2NC60FP PDF Datasheet