This is one of the types of MOSFETs and is a kind of transistor.

Part Number: H6NA80FI

Function: N-Channel MOSFET ( 800V, 3.4A )

Pakcage : TO-247, ISOWATT218 Type

Manufacturer: ST Microelectronics

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Description

This is N-Channel 800V, 3.4A, Fast Power MOS Transistor.

H6NA80FI Features

1. TYPICAL RDS(on) = 1.8 Ω

2. AVALANCE RUGGED TECHNOLOGY

3. 100% AVALANCHE TESTED

4. REPETITIVE AVALANCHE DATA AT 100 °C

5. LOW GATE CHARGE

6. VERY HIGH CURRENT CAPABILITY

7. APPLICATION ORIENTED CHARACTERIZATION

Applications

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SOLENOID AND RELAY DRIVERS

3. REGULATORS

4. DC-DC & DC-AC CONVERTERS

5. MOTOR CONTROL, AUDIO AMPLIFIERS

6. AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.4 A

4. Power Dissipation : Ptot = 60 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

H6NA80FI PDF Datasheet

Part Number: F2HNK60Z, STF2HNK60Z

Function: N-Channel 600V, 2A, Power MOSFET

Package: TO-220FP Type

Manufacturer: STMicroelectronics

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Description

F2HNK60Z is 600V, 2A, MOSFET. 

The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Features:

1. TYPICAL RDS(on) = 4.4Ω

2. EXTREMELY HIGH dv/dt CAPABILITY

3. ESD IMPROVED CAPABILITY

4. 100% AVALANCHE TESTED

5. NEW HIGH VOLTAGE BENCHMARK

6. GATE CHARGE MINIMIZED

Applications:

1. AC ADAPTORS AND BATTERY CHARGERS

2. SWITH MODE POWER SUPPLIES (SMPS)

F2HNK60Z PDF Datasheet